Highly stable two-dimensional Ruddlesden–Popper perovskite-based resistive switching memory devices
Milon Kundar, Koushik Gayen, Rajeev Ray, Dushyant Kushavah, Suman Kalyan Pal
Abstract
s, and good endurance characteristics of 200 cycles. This study investigates temperature-dependent RS behaviors, elucidating the creation and annihilation of a conducting pathway in the presence of an external electric field. Additionally, the RS property of 2D RP perovskite-based memory devices is found to be retained over 45 days at ambient conditions under a relative humidity of 47% ± 4%. Our findings may accelerate the technological deployment of stable 2D perovskite-based RS memory devices for successful logic application.
Topics & Concepts
Perovskite (structure)Resistive random-access memoryResistive touchscreenMaterials scienceData retentionOptoelectronicsStability (learning theory)Chemical engineeringElectrical engineeringComputer scienceChemistryElectrodePhysical chemistryEngineeringMachine learningPerovskite Materials and ApplicationsAdvanced Memory and Neural ComputingTransition Metal Oxide Nanomaterials