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Effects of oxygen vacancies on ferroelectric characteristics of RF-sputtered Hf0.5Zr0.5O2

Changhyeon Han, Ki Ryun Kwon, Jeonghan Kim, Jiyong Yim, Sangwoo Kim, Eun Chan Park, Ji Won You, Soi Jeong, Rino Choi, Daewoong Kwon, Daewoong Kwon

2023Materials Science in Semiconductor Processing21 citationsDOI

Topics & Concepts

FerroelectricityMaterials scienceAnnealing (glass)DepolarizationQuantum tunnellingOxygenPolarization (electrochemistry)OptoelectronicsDielectricCondensed matter physicsAnalytical Chemistry (journal)Composite materialChemistryPhysical chemistryOrganic chemistryMedicinePhysicsEndocrinologyChromatographyFerroelectric and Negative Capacitance DevicesSemiconductor materials and devicesAdvanced Memory and Neural Computing
Effects of oxygen vacancies on ferroelectric characteristics of RF-sputtered Hf0.5Zr0.5O2 | Litcius