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Revealing the weak Fermi level pinning effect of 2D semiconductor/2D metal contact: A case of monolayer In2Ge2Te6 and its Janus structure In2Ge2Te3Se3

Jing Li, Wenhan Zhou, Lili Xu, Jialin Yang, Hengze Qu, Tingting Guo, Biao Xu, Shengli Zhang, Haibo Zeng

2022Materials Today Physics45 citationsDOI

Topics & Concepts

Schottky barrierJanusWork functionDipoleMonolayerMaterials scienceCondensed matter physicsSemiconductorFermi levelDensity functional theoryNanotechnologyOptoelectronicsChemistryPhysicsComputational chemistryLayer (electronics)DiodeOrganic chemistryQuantum mechanicsElectron2D Materials and ApplicationsAdvanced Thermoelectric Materials and DevicesChalcogenide Semiconductor Thin Films
Revealing the weak Fermi level pinning effect of 2D semiconductor/2D metal contact: A case of monolayer In2Ge2Te6 and its Janus structure In2Ge2Te3Se3 | Litcius