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Effect of intrinsic point defects on the catalytic and electronic properties of <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msub><mml:mrow><mml:mi>Cu</mml:mi></mml:mrow><mml:mn>2</mml:mn></mml:msub><mml:msub><mml:mrow><mml:mi>WS</mml:mi></mml:mrow><mml:mn>4</mml:mn></mml:msub></mml:math> single layer: <i>Ab initio</i> calculations

Tarik Ouahrani, Reda M. Boufatah, Mohammed Benaïssa, Ángel Morales‐García, Michaël Badawi, Daniel Errandonea

2023Physical Review Materials66 citationsDOI

Abstract

The challenges imposed by climate change require the continued improvement and identification of materials for the development of green technologies. Point defect engineering is a promising technology for producing green hydrogen by taking advantage of catalytic hydrogen evolution reactions. In this work, we investigate the role of anionic and cationic vacancy point defects, as well as the nature of the active sites, in the catalytic activation of ${\mathrm{Cu}}_{2}{\mathrm{WS}}_{4}$ single layers. The stability of the pristine and defective structures of ${\mathrm{Cu}}_{2}{\mathrm{WS}}_{4}$ has been thoroughly investigated using density-functional theory calculations. A deep analysis of the formation enthalpy indicates that the Cu vacancy is the chemically most favorable vacancy. However, the calculated adsorption energy indicates that the presence of such vacancies slightly enhances the hydrogen evolution reaction. In contrast, the formation of an S vacancy considerably magnifies the same reaction in ${\mathrm{Cu}}_{2}{\mathrm{WS}}_{4}$ single layers.

Topics & Concepts

Vacancy defectMaterials scienceEnthalpyCatalysisHydrogenCationic polymerizationDensity functional theoryCrystallographic defectThermodynamicsPhysical chemistryCrystallographyComputational chemistryPhysicsChemistryQuantum mechanicsPolymer chemistryBiochemistryChalcogenide Semiconductor Thin FilmsElectrocatalysts for Energy ConversionCopper-based nanomaterials and applications
Effect of intrinsic point defects on the catalytic and electronic properties of <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msub><mml:mrow><mml:mi>Cu</mml:mi></mml:mrow><mml:mn>2</mml:mn></mml:msub><mml:msub><mml:mrow><mml:mi>WS</mml:mi></mml:mrow><mml:mn>4</mml:mn></mml:msub></mml:math> single layer: <i>Ab initio</i> calculations | Litcius