Nanotransistor-based gas sensing with record-high sensitivity enabled by electron trapping effect in nanoparticles
Qitao Hu, P. M. Solomon, Lars Österlund, Zhen Zhang
Abstract
Abstract Highly sensitive, low-power, and chip-scale H 2 gas sensors are of great interest to both academia and industry. Field-effect transistors (FETs) functionalized with Pd nanoparticles (PdNPs) have recently emerged as promising candidates for such H 2 sensors. However, their sensitivity is limited by weak capacitive coupling between PdNPs and the FET channel. Herein we report a nanoscale FET gas sensor, where electrons can tunnel between the channel and PdNPs and thus equilibrate them. Gas reaction with PdNPs perturbs the equilibrium, and therefore triggers electron transfer between the channel and PdNPs via trapping or de-trapping with the PdNPs to form a new balance. This direct communication between the gas reaction and the channel enables the most efficient signal transduction. Record-high responses to 1–1000 ppm H 2 at room temperature with detection limit in the low ppb regime and ultra-low power consumption of $$\sim$$ <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"> <mml:mo>~</mml:mo> </mml:math> 300 nW are demonstrated. The same mechanism could potentially be used for ultrasensitive detection of other gases. Our results present a supersensitive FET gas sensor based on electron trapping effect in nanoparticles.