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Structural characteristics of α-Ga2O3 films grown on sapphire by halide vapor phase epitaxy

Soo Hyeon Kim, Mino Yang, Haeyong Lee, Jong‐Soon Choi, Hyun Uk Lee, Un Jeong Kim, Moonsang Lee

2020Materials Science in Semiconductor Processing12 citationsDOI

Topics & Concepts

Materials scienceSapphireEpitaxyHalideVapor phasePhase (matter)OptoelectronicsChemical engineeringNanotechnologyInorganic chemistryOpticsThermodynamicsLayer (electronics)Organic chemistryChemistryLaserPhysicsEngineeringGa2O3 and related materialsAdvanced Photocatalysis TechniquesZnO doping and properties
Structural characteristics of α-Ga2O3 films grown on sapphire by halide vapor phase epitaxy | Litcius