A Temperature and Dielectric Roughness-Aware Matrix Rational Approximation Model for the Reliability Assessment of Copper– Graphene Hybrid On-Chip Interconnects
Rahul Kumar, Amit Kumar, Surila Guglani, Somesh Kumar, Sourajeet Roy, Brajesh Kumar Kaushik, Rohit Sharma, Ramachandra Achar
Abstract
In this article, a closed-form matrix rational approximation (MRA) model is presented for the reliability assessment of copper-graphene hybrid on-chip interconnect networks. The key feature of this MRA model is its capacity to predict how the different values of temperature and dielectric roughness affect the signal integrity performance of the hybrid interconnect networks. As a result, the proposed MRA model is well suited for very fast parametric sweeps and worst case analysis of the hybrid interconnect networks, which has not been possible using existing closed-form models or even SPICE simulations. Numerical examples show that the proposed model is significantly more efficient than conventional models while exhibiting error less than 5%.