First demonstration of sub-12 nm L g gate last IGZO-TFTs with oxygen tunnel architecture for front gate devices
Subhali Subhechha, Nouredine Rassoul, Attilio Belmonte, Romain Delhougne, Kaustuv Banerjee, Gabriele Luca Donadio, Harold Dekkers, Michiel J. van Setten, Harinarayanan Puliyalil, Ming Mao, Shreya Kundu, Murat Pak, Lieve Teugels, D. Tsvetanova, N. Bazzazian, L. Klijs, Hubert Hody, Adrian Chasin, J. Heijlen, L. Goux, Gouri Sankar Kar
Abstract
The first amorphous IGZO-based transistors integrated in a BEOL compatible gate-last integration scheme with buried oxygen tunnel under the channel and self-aligned contacts are demonstrated. This architecture reduces the number of critical process steps containing hydrogen and mitigates the R series increase during oxygen anneal for defect passivation. Higher I on is achieved without compromising on I off . We also report the shortest ever IGZO-TFTs with L g on > 6 µA/µm (without defect passivation anneal) were achieved through gate-oxide and IGZO thickness scaling.