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Buried Power Rail Metal exploration towards the 1 nm Node

Anshul Gupta, D. Radisic, Jan Willem Maes, Olalla Varela Pedreira, J-P. Soulie, N. Jourdan, Hans Mertens, S. Bandyopadhyay, Quoc Toan Le, Antoine Pacco, N. Heylen, K. Vandersmissen, K. Devriendt, C. Zhu, Sukanya Datta, Farid Sebaai, S. Wang, Moataz Mousa, J. Lee, J. Geypen, B. De Wachter, Bilal Chehab, Shairfe Muhammad Salahuddin, Gayle Murdoch, S. Biesemans, Zs. Tôkei, E. Dentoni Litta, Naoto Horiguchi

20212021 IEEE International Electron Devices Meeting (IEDM)23 citationsDOI

Abstract

This work reports metal exploration for buried power rail (BPR) and Via-to-BPR (VBPR) towards the 1 nm node. For tungsten, which is the first choice of BPR metal at the 3 nm node, we optimize W metallization stack to minimize line resistivity, together with ways to reduce W-BPR - W-VBPR contact resistance (R). For scaled BPR CDs at the 2 nm and 1 nm nodes, we introduce molybdenum at the BPR level and benchmark its R and electromigration against W and Ru metallization. Additionally, Mo dry & wet, selective etch processes to enable Mo-BPR recess in fin/STI stack at fin pitch 24 nm, and a Mo wet clean process for VBPR contact formation are also demonstrated.

Topics & Concepts

ElectromigrationMaterials scienceTungstenNode (physics)Contact resistanceStack (abstract data type)OptoelectronicsBusiness process reengineeringMolybdenumMetallurgyElectrical engineeringComposite materialComputer scienceEngineeringStructural engineeringChemical engineeringLayer (electronics)Programming languageOil refineryElectrical Contact Performance and AnalysisSemiconductor materials and interfacesCopper Interconnects and Reliability
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