Power Cycling Capability Comparison of Si and SiC MOSFETs under Different Conduction Modes
Jie Chen, Erping Deng, Zixuan Zhao, Yuxuan Wu, Yongzhang Huang
Abstract
Different from the single conduction mode of IGBT and diode, the MOSFET has three conduction modes and corresponding to three different power cycling test (PCT) methods respectively. In order to fully understand the difference between these conduction modes, the Si and SiC MOSFETs are selected due to their different body diode characteristics to compare the power cycling capability under the same thermal stress but in different modes. The experimental results show that PCT in different conduction modes have an impact on the failure mechanism and lifetime, and the corresponding PCT method must be selected according to the actual working conditions of MOSFETs.
Topics & Concepts
Materials scienceThermal conductionMOSFETPower cyclingPower MOSFETDiodeInsulated-gate bipolar transistorTemperature cyclingStress (linguistics)OptoelectronicsPower semiconductor devicePower (physics)Electronic engineeringElectrical engineeringThermalVoltageReliability (semiconductor)TransistorComposite materialEngineeringPhysicsMeteorologyQuantum mechanicsLinguisticsPhilosophySilicon Carbide Semiconductor TechnologiesSilicon and Solar Cell TechnologiesThin-Film Transistor Technologies