Physical Modeling of Charge Trapping Effects in GaN/Si Devices and Incorporation in the ASM-HEMT Model
Mamta Pradhan, M. Alomari, M. Moser, Dirk Fahle, H. Hahn, M. Heuken, Joachim N. Burghartz
Abstract
In this work, the dynamic behavior of gallium nitride on silicon high electron mobility transistors (GaN/Si HEMT) with carbon doped buffer is modeled using a finite state machine embedded into the core Advanced SPICE Model for High Electron Mobility Transistor (ASM-HEMT). The model is based on the physics of trapping and detrapping of electrons in carbon at nitrogen-site acceptor trap (denoted here as C <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">N</sub> ) and does not require an equivalent Resistance-Capacitance circuit. The model is validated against three off-state stress drain voltages of 50 V, 100 V, and 150 V using only C <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">N</sub> as trap species.