Optimizing endurance performance of Ga2O3 random resistive access memories by altering oxygen vacancy content
Wenjing Li, Jiaxian Wan, Zexin Tu, Hui Li, Hao Wu, Chang Liu
Topics & Concepts
Materials scienceResistive random-access memoryConductanceDopingOhmic contactThermal conductionResistive touchscreenMemristorElectrical conductorOxygenOptoelectronicsVoltageLayer (electronics)Composite materialCondensed matter physicsElectrical engineeringPhysicsEngineeringOrganic chemistryChemistryAdvanced Memory and Neural ComputingGa2O3 and related materialsTransition Metal Oxide Nanomaterials