Strong nanophotonic quantum squeezing exceeding 3.5 dB in a foundry-compatible Kerr microresonator
Yichen Shen, Ping‐Yen Hsieh, Sashank Kaushik Sridhar, S. Feldman, You-Chia Chang, Thomas A. Smith, Avik Dutt
Abstract
Squeezed light, with its quantum noise reduction capabilities, has emerged as a powerful resource in quantum information processing and precision metrology. To reach noise reduction levels such that a quantum advantage is achieved, off-chip squeezers are typically used. The development of on-chip squeezed light sources, particularly in nanophotonic platforms, has been challenging. We report 3.7±0.2dB of directly detected nanophotonic quantum squeezing using foundry-fabricated silicon nitride (Si 3 N 4 ) microrings with an inferred squeezing level of 10.2 dB on-chip. The squeezing level is robust across multiple devices and pump detunings, and is consistent with the overcoupling degree without noticeable degradation from excess classical noise. We also offer insights to mitigate thermally induced excess noise, which typically degrades squeezing, by using small-radius rings with a larger free spectral range (450 GHz) and consequently lower parametric oscillation thresholds. Our results demonstrate that Si 3 N 4 is a viable platform for strong quantum noise reduction in a CMOS-compatible, scalable architecture.