Formation of Dislocations During Phosphorus Doping in the Technology of Silicon p-i-n Photodiodes and their Influence on Dark Currents
Mykola S. Kukurudziak
Abstract
Journal of Nano- and Electronic Physics. Scientific journal. ISSN: 2077-6772. Journal abbreviation: J. Nano- Electron. Phys. No page charges. All articles are freely available on-line. Issued 4 times per year. Publisher: Sumy State University. (Sumy, Ukraine)
Topics & Concepts
Dark currentDislocationMaterials scienceIngotDopingImpurityDiffusionSiliconWaferDepletion regionPhosphorusCondensed matter physicsPhotodiodeSemiconductorOptoelectronicsPhotodetectorChemistryComposite materialPhysicsMetallurgyAlloyThermodynamicsOrganic chemistrySemiconductor materials and interfacesSilicon Nanostructures and PhotoluminescenceAdvanced Surface Polishing Techniques