Comparative studies of <scp>metal‐organic</scp> decomposed <scp>Ga<sub>x</sub>Ce<sub>y</sub>O<sub>z</sub></scp> and <scp>CeO<sub>2</sub></scp> based functional <scp>MOS</scp> capacitor
Kar Yeow Tan, Puteri Haslinda Megat Abdul Hedei, Ainita Rozati Mohd Zabidi, Farah Hayati Ahmad, Kammutty Musliyarakath Abdul Shekkeer, Khai Shenn Lau, Way Foong Lim, Z. Hassan, Hock Jin Quah
Abstract
Summary A comparison between metal‐organic decomposed Ga x Ce y O z and CeO 2 passivation layers subjected to post‐deposition annealing at 800°C in oxygen ambient was presented. Mitigation in the formation of positively charged oxygen vacancies in Ga x Ce y O z layer was disclosed by the grazing incidence X‐ray diffraction characterization as well as the acquisition of a lower value of positive effective oxide charge (Q eff ) than CeO 2 layer. In addition, Ga x Ce y O z layer was able to sustain a higher electric breakdown field and a lower leakage current density due to the attainment of a lower interface trap density extracted using Terman's and high‐low methods, slow trap density, and Q eff when compared with CeO 2 layer.