Self-driven photodetector based on a GaSe/MoSe2 selenide van der Waals heterojunction with the hybrid contact
Jing Ning, Yu Zhou, Jincheng Zhang, Wei Lü, Jianguo Dong, Chaochao Yan, Dong Wang, Xue Shen, Xinliang Feng, Hong Zhou, Yue Hao
Abstract
The restacking of stripped two-dimensional material into a van der Waals heterojunction provides a promising technology for high-performance optoelectronic devices. This paper presents a self-driven photodetector composed of p-GaSe/n-MoSe2. The hybrid contact is directly formed between the electrode and the heterojunction, which considerably improves the photovoltaic effect. In addition, the Schottky barrier between the semiconductor and metal electrodes creates a built-in electric field, which enhances the self-driven performance of the device. The as-fabricated photodetector has the high responsivity of 0.169 A W−1 at zero bias and the specific detectivity of 6.6 × 1011 Jones. When bias was applied, a responsivity of 6.81 A W−1 and a specific detectivity of 2.8 × 1013 Jones have also been obtained. This work demonstrates that selenide van der Waals heterojunctions based on two-dimensional materials have great potential for future electronic and optoelectronic applications.