Two-dimensional intrinsic ferrovalley <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mi>Gd</mml:mi><mml:msub><mml:mi mathvariant="normal">I</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:mrow></mml:math> with large valley polarization
Haixia Cheng, Jun Zhou, Wei Ji, Yanning Zhang, Yuan Ping Feng
Abstract
Manipulation of the valley degree of freedom provides a novel paradigm in quantum information technology. In this work, through first principles calculations, we demonstrate that monolayer $\mathrm{Gd}{\mathrm{I}}_{2}$ is a promising candidate material for valleytronic applications. Monolayer $\mathrm{Gd}{\mathrm{I}}_{2}$ can be easily exfoliated from bulk, and it is spontaneously valley polarized with a giant splitting of 149 meV due to its intrinsic ferromagnetism and large spin orbital coupling. The anomalous valley Hall effect could be realized in monolayer $\mathrm{Gd}{\mathrm{I}}_{2}$ by an appropriate external electric field. Furthermore, the valley polarization feature is stable against the biaxial in-plane strain. Our findings provide an extraordinary and potential material platform for experimental studies and practical applications in the emergent field of valleytronics.