Enhanced deep-ultraviolet sensing by an all-inorganic p-PZT/n-Ga <sub>2</sub> O <sub>3</sub> thin-film heterojunction
Zeng Liu, Shaohui Zhang, Yusong Zhi, Shan Li, Zuyong Yan, Xulong Chu, Ang Bian, Peigang Li, Weihua Tang
Abstract
Abstract In this work, an enhanced-performance deep-ultraviolet (DUV) photodetector based on a Ga 2 O 3 /lead zirconate titanate (Pb(Zr 0.52 Ti 0.48 )O 3 , PZT) p-n heterojunction is fabricated and characterized for the first time. Compared to a Ga 2 O 3 -based device, the heterojunction device achieved a lower dark current of 2.7 <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"> <mml:mo>×</mml:mo> </mml:math> 10 −11 A, a higher photo- to dark-current ratio of 2 <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"> <mml:mo>×</mml:mo> </mml:math> 10 3 , a higher responsivity of 5.5 mA W −1 , a larger specific detectivity of 2.6 <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"> <mml:mo>×</mml:mo> </mml:math> 10 11 Jones and a higher external quantum efficiency of 2.7% at −2 V under 254 nm UV light illumination with an intensity of 500 μ W cm −2 . The p-PZT/n-Ga 2 O 3 was confirmed to be a potential candidate for the construction of DUV photodetectors with enhanced sensing performance.