THE RESULTS OF SIMULATION OF THE PROCESS OF OCCURRENCE OF DAMAGES TO THE SEMICONDUCTOR ELEMENTS UNDER THE INFLUENCE OF MULTI-FREQUENCY SIGNALS OF SHORT DURATION
Iasechko, M., Sachaniuk-Kavets’ka, N., Kostrytsia, V., Nikitchenko, V., Iasechko, S. V., Ясечко, С. В., ORCID: http://orcid.org/0000-0003-4058-9959
Abstract
The results of simulation of the process of occurrence of damages to the semiconductor elements under the influence of multi-frequency signals of short duration / Maksym Iasechko, Natalia Sachaniuk-Kavets’ka, Viktoriia Kostrytsia, Viktor Nikitchenko, Svitlana Iasechko // Journal of Critical Reviews. – 2020. – № 7 (13). – Р. 109-112. – DOI: https://doi.org/10.31838/jcr.07.13.18
Topics & Concepts
SemiconductorDiodeSemiconductor deviceAffectionSemiconductor device fabricationTransistorMaterials scienceElectronic engineeringElectrical engineeringEngineeringVoltageOptoelectronicsNanotechnologyPsychologyLayer (electronics)WaferSocial psychologyAdvanced Research in Systems and Signal ProcessingAerospace, Electronics, Mathematical Modeling