Reliability of Poly-Si TFTs Under Voltage Pulse With Fast Transition Time
Yuhuang Zeng, Yan Yan, Zhendong Jiang, Zhihe Xia, Meng Zhang, Man Wong, Juin J. Liou, Hoi Sing Kwok
Abstract
In this letter, the reliability of polycrystalline silicon thin-film transistors under voltage pulse with fast transition time is systematically investigated. The pulse duty ratio plays an important role in device degradation. Combined with a transient simulation, the dynamic hot carrier degradation mechanism is discussed and developed.
Topics & Concepts
Materials scienceReliability (semiconductor)Thin-film transistorTransition timeDegradation (telecommunications)Transient (computer programming)OptoelectronicsSiliconPulse (music)VoltagePolycrystalline siliconTransistorElectronic engineeringElectrical engineeringComputer scienceEngineeringPower (physics)NanotechnologyPhysicsOperating systemQuantum mechanicsArtificial intelligenceLayer (electronics)Thin-Film Transistor TechnologiesSilicon and Solar Cell TechnologiesElectrostatic Discharge in Electronics