Divacancy and silicon vacancy color centers in 4H-SiC fabricated by hydrogen and dual ions implantation and annealing
Tianze Sun, Zongwei Xu, Jintong Wu, Y. H. Fan, Fei Ren, Ying Song, Long Yang, Ping‐Heng Tan
Topics & Concepts
Materials scienceIon implantationAnnealing (glass)Vacancy defectPhotoluminescenceFluenceSilicon carbideElectron paramagnetic resonanceIonSemiconductorHydrogenDopingSiliconOptoelectronicsAtomic physicsMolecular physicsNuclear magnetic resonanceCrystallographyChemistryMetallurgyOrganic chemistryComposite materialPhysicsSilicon Carbide Semiconductor TechnologiesDiamond and Carbon-based Materials ResearchThin-Film Transistor Technologies