Versatile Post-Doping toward Two-Dimensional Semiconductors
Yuya Murai, Shaochun Zhang, T Hotta, Zheng Liu, Takahiko Endo, Hiroshi Shimizu, Yasumitsu Miyata, Toshifumi Irisawa, Yanlin Gao, Mina Maruyama, Susumu Okada, Hiroyuki Mogi, Tomohiro Sato, Shoji Yoshida, Hidemi Shigekawa, Takashi Taniguchi, Kenji Watanabe, Rubén Cantón-Vitoria, Ryo Kitaura
Abstract
We have developed a simple and straightforward way to realize controlled postdoping toward 2D transition metal dichalcogenides (TMDs). The key idea is to use low-kinetic-energy dopant beams and a high-flux chalcogen beam simultaneously, leading to substitutional doping with controlled dopant densities. Atomic-resolution transmission electron microscopy has revealed that dopant atoms injected toward TMDs are incorporated substitutionally into the hexagonal framework of TMDs. The electronic properties of doped TMDs (Nb-doped WSe2) have shown drastic change and p-type action with more than 2 orders of magnitude increase in current. Position-selective doping has also been demonstrated by the postdoping toward TMDs with a patterned mask on the surface. The postdoping method developed in this work can be a versatile tool for 2D-based next-generation electronics in the future.