Dominant factors and their action mechanisms on material removal rate in electrochemical mechanical polishing of 4H-SiC (0001) surface
Xiaozhe Yang, Xu Yang, Kentaro Kawai, Kenta Arima, Kazuya Yamamura
Topics & Concepts
Materials scienceAnodePolishingElectrochemistryStrain rateRaman spectroscopyElectrolyteDopingChemical-mechanical planarizationWaferAnodic oxidationComposite materialChemical engineeringElectrodeNanotechnologyChemistryOptoelectronicsOpticsPhysical chemistryEngineeringPhysicsAdvanced Surface Polishing TechniquesIntegrated Circuits and Semiconductor Failure AnalysisSemiconductor materials and devices