High-Speed Memristive Ternary Content Addressable Memory
Krishna Prasad Gnawali, Spyros Tragoudas
Abstract
This article presents an ultra-high-speed memristor-based non-volatile Ternary Content Addressable Memory (TCAM) for use in real-time and big-data applications that require low power dissipation and fast data retrieval. It proposes a novel memristive TCAM (MTCAM) cell using memristors as a bit storage device along with an ultra-fast match line sense amplifier to minimize search time. SPICE simulation on 45 nm technology show that the search delay on a 144-bit proposed MTCAM at a supply voltage of 1 V and a sense margin of 140 mV is 175 ps with per bit search energy of 1.2 fJ. It is 1.12× times faster and dissipates 67 percent less search energy per bit than the fastest existing 144-bit MTCAM design.
Topics & Concepts
MemristorComputer scienceContent-addressable memoryContent-addressable storageSpiceSense amplifierDissipationComputer hardwareEnergy (signal processing)VoltageNon-volatile memorySemiconductor memoryElectronic engineeringElectrical engineeringArtificial neural networkArtificial intelligencePhysicsEngineeringQuantum mechanicsThermodynamicsAdvanced Memory and Neural ComputingNetwork Packet Processing and OptimizationFerroelectric and Negative Capacitance Devices