Surface passivation extends single and biexciton lifetimes of InP quantum dots
Wenxing Yang, Yawei Yang, Alexey L. Kaledin, Sheng He, Tao Jin, James R. McBride, Tianquan Lian
Abstract
∼ 1.2 ± 0.2 ps). The growth of an ultra-thin ZnS shell (∼0.2 nm), on the other hand, can significantly extend the biexciton lifetime of InP QDs to 20 ± 2 ps, making it a passivation scheme that can improve both the single and multiple exciton lifetimes. Based on these results, we discuss the possible trap-assisted Auger processes in InP QDs, highlighting the particular importance of trap passivation for reducing the Auger recombination loss in InP QDs.
Topics & Concepts
PassivationQuantum dotBiexcitonSurface (topology)Materials scienceOptoelectronicsCondensed matter physicsNanotechnologyChemistryMolecular physicsPhysicsMathematicsLayer (electronics)GeometryQuantum Dots Synthesis And PropertiesNanowire Synthesis and ApplicationsChalcogenide Semiconductor Thin Films