Partial Pressure Assisted Growth of Single-Layer Graphene Grown by Low-Pressure Chemical Vapor Deposition: Implications for High-Performance Graphene FET Devices
Indu Sharma, Girija Shankar Papanai, Sharon J. Paul, Bipin Kumar Gupta
Abstract
. Hence, the obtained results trigger that the partial pressure is an important parameter for the growth of SLG and having various potential applications in high-performance graphene FET (GFET) devices.
Topics & Concepts
GrapheneChemical vapor depositionPartial pressureNucleationRaman spectroscopyMaterials scienceNanotechnologyField-effect transistorLayer (electronics)OptoelectronicsChemical physicsTransistorChemistryOpticsOrganic chemistryElectrical engineeringOxygenVoltagePhysicsEngineeringGraphene research and applicationsCarbon Nanotubes in CompositesDiamond and Carbon-based Materials Research