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An Over 120 dB Single Exposure Wide Dynamic Range CMOS Image Sensor With Two-Stage Lateral Overflow Integration Capacitor

Yasuyuki Fujihara, Maasa Murata, Shota Nakayama, Rihito Kuroda, Shigetoshi Sugawa

2020IEEE Transactions on Electron Devices49 citationsDOIOpen Access PDF

Abstract

This article presents a prototype linear response single exposure CMOS image sensor with two-stage lateral overflow integration capacitors (LOFIC) exhibiting over the 120-dB dynamic range (DR) with 11.4 Me <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-</sup> full well capacity (FWC) and maximum signal-to-noise ratio (SNR) of 70 dB. The measured SNR at all switching points were over 35 dB thanks to the proposed two-stage LOFIC.

Topics & Concepts

CapacitorDynamic rangeCMOSWide dynamic rangeStage (stratigraphy)Image sensorSignal-to-noise ratio (imaging)High dynamic rangeRange (aeronautics)SIGNAL (programming language)Electronic engineeringElectrical engineeringNoise (video)PhysicsComputer scienceEngineeringImage (mathematics)OpticsVoltageArtificial intelligenceProgramming languagePaleontologyBiologyAerospace engineeringCCD and CMOS Imaging SensorsAnalytical Chemistry and SensorsNeuroscience and Neural Engineering
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