High-quality, room-temperature, surface-activated bonding of GaInAsP/InP membrane structure on silicon
Weicheng Fang, Naoki Takahashi, Yoshitaka Ohiso, Tomohiro Amemiya, Nobuhiko Nishiyama
Abstract
Abstract Room-temperature surface-activated bonding (SAB) is a promising technology in large-scale hybrid photonic integration. To realize a membrane laser with low thermal resistance on Si without benzocyclobutene (BCB) bonding, a GaInAsP/InP membrane structure with a five-quantum-well active layer was bonded on Si successfully using SAB assisted by a thin a-Si film. The bonding strength reached a measurement limitation strength of 2.47 MPa for a 2 inch wafer with a thin 8.2 nm a-Si bonding layer without any annealing process for bonding. Over 90% of the bonding area, uniform photoluminescence intensity, and a well-maintained quantum-well structure were achieved after the InP-substrate removal.