Single nanoflake-based PtSe<sub>2</sub> p–n junction (in-plane) formed by optical excitation of point defects in BN for ultrafast switching photodiodes
Sikandar Aftab, Ms Samiya, Hafiz Mansoor Ul Haq, Muhammad Waqas Iqbal, Muhammad Hussain, Saqlain Yousuf, Atteq ur Rehman, Muhammad Usman Khan, Zaheer Ahmed, Muhammad Zahir Iqbal
Abstract
Here, novel lateral PtSe<sub>2</sub> p–n junctions are fabricated based on the PtSe<sub>2</sub>/BN/graphene (Gr) van der Waals heterostructures upon the illumination of visible light <italic>via</italic> the optical excitation of the mid-gap point defects in hexagonal boron nitride (h-BN).
Topics & Concepts
Materials scienceExcitationHeterojunctionHexagonal boron nitridePhotodiodeOptoelectronicsUltrashort pulsevan der Waals forceHexagonal crystal systemGrapheneOpticsNanotechnologyCrystallographyLaserPhysicsMoleculeQuantum mechanicsChemistryGraphene research and applications2D Materials and ApplicationsTopological Materials and Phenomena