Litcius/Paper detail

Self-Assembled SnO<sub>2</sub>/SnSe<sub>2</sub> Heterostructures: A Suitable Platform for Ultrasensitive NO<sub>2</sub> and H<sub>2</sub> Sensing

Valentina Paolucci, Gianluca D’Olimpio, Chia-Nung Kuo, C. S. Lue, Danil W. Boukhvalov, C. Cantalini, Antonio Politano

2020ACS Applied Materials & Interfaces70 citationsDOI

Abstract

By means of experiments and theory, the gas-sensing properties of tin diselenide (SnSe2) were elucidated. We discover that, while the stoichiometric single crystal is chemically inert even in air, the nonstoichiometric sample assumes a subnanometric SnO2 surface oxide layer once exposed to ambient atmosphere. The presence of Se vacancies induces the formation of a metastable SeO2-like layer, which is finally transformed into a SnO2 skin. Remarkably, the self-assembled SnO2/SnSe2-x heterostructure is particularly efficient in gas sensing, whereas the stoichiometric SnSe2 sample does not show sensing properties. Congruently with the theoretical model, direct sensing tests carried out on SnO2/SnSe2-x at an operational temperature of 150 °C provided sensitivities of (1.06 ± 0.03) and (0.43 ± 0.02) [ppm]−1 for NO2 and H2, respectively, in dry air. The corresponding calculated limits of detection are (0.36 ± 0.01) and (3.6 ± 0.1) ppm for NO2 and H2, respectively. No detectable changes in gas-sensing performances are observed in a time period extended above six months. Our results pave the way for a novel generation of ambient-stable gas sensor based on self-assembled heterostructures formed taking advantage on the natural interaction of substoichiometric van der Waals semiconductors with air.

Topics & Concepts

HeterojunctionMaterials scienceStoichiometryvan der Waals forceInert gasTin oxideMetastabilityLayer (electronics)Analytical Chemistry (journal)DiselenideTinNanotechnologyOptoelectronicsPhysical chemistryMoleculeSeleniumOrganic chemistryDopingMetallurgyComposite materialChemistryGas Sensing Nanomaterials and Sensors2D Materials and ApplicationsAdvanced Thermoelectric Materials and Devices