Integrated Coherent Tunable Laser (ICTL) With Ultra-Wideband Wavelength Tuning and Sub-100 Hz Lorentzian Linewidth
Paul A. Morton, Chao Xiang, Jacob B. Khurgin, Christopher Morton, Minh A. Tran, Jon Peters, Joel Guo, Michael J. Morton, John E. Bowers
Abstract
This paper describes the design, fabrication, and record performance of a new class of ultra-wideband wavelength tuning, ultra-low noise semiconductor laser, the Integrated Coherent Tunable Laser (ICTL). The ICTL device is designed for, and fabricated in, a CMOS foundry based Silicon Photonics platform, utilizing heterogeneous integration of III-V material to create the integrated gain section of the laser–enabling high-volume mass-market manufacturing at low cost and with high reliability. The ICTL incorporates three or more ultra-low loss micro-ring resonators, with large ring size, in a Sagnac loop reflector geometry, creating exceptional laser reflector performance, plus an extended laser cavity length that enables highly-coherent output; ultra-low linewidth and phase noise. This paper describes record integrated laser performance; 118 nm wavelength tuning, covering S-, C- and L-bands, with Lorentzian linewidth <100 Hz, and with excellent relative intensity noise (RIN) of ≤ −155 dBc/Hz. The remarkable performance of the ICTL device, coupled with the high volume/low cost capability of the Silicon Photonics platform enables next-generation applications including ultra-wideband WDM transmission systems, fiber-optic and medical-wearable sensing systems, and automotive FMCW LiDAR systems utilizing wavelength scanning.