Device performance limits and negative capacitance of monolayer GeSe and GeTe tunneling field effect transistors
Peipei Xu, Jiakun Liang, Hong Li, Fengbin Liu, Jun Tie, Zhiwei Jiao, Jing Luo, Jing Lü
Abstract
The ML GeSe and GeTe NCTFETs fulfill the ITRS low power and high performance devices, respectively, at the “4/3” node range.
Topics & Concepts
MonolayerCapacitanceMaterials scienceQuantum tunnellingTransistorField-effect transistorOptoelectronicsCondensed matter physicsNegative impedance converterField (mathematics)NanotechnologyPhysicsQuantum mechanicsVoltageMathematicsElectrodeVoltage sourcePure mathematics2D Materials and ApplicationsMolecular Junctions and NanostructuresSemiconductor materials and interfaces