Understanding of Tunable Selector Performance in Si-Ge-As-Se OTS Devices by Extended Percolation Cluster Model Considering Operation Scheme and Material Design
Shoichi Kabuyanagi, Daniele Garbin, A. Fantini, Sergiu Clima, R. Degraeve, Gabriele Luca Donadio, Wouter Devulder, Romain Delhougne, D. Cellier, Andrew Cockburn, W. G. Kim, Mahendra Pakala, Michinori Suzuki, L. Goux, Gouri Sankar Kar
Abstract
Switching mechanism and its controllability in Ovonic Threshold Switching (OTS) devices are systematically investigated by using Si-Ge-As-Se quaternary system known as promising OTS materials. We newly demonstrate that selector device performance is flexibly tunable by controlling fall time of switching pulse as well as operation current. Meanwhile, As- and Si-incorporation are found to be beneficial in terms of stable operation and faster recovery. All results are consistently understandable by extended percolation cluster model, supported by ab-initio and Monte-Carlo simulations.