Unraveling the importance of fabrication parameters of copper oxide-based resistive switching memory devices by machine learning techniques
Suvarna M. Patil, Somnath S. Kundale, Santosh S. Sutar, Pramod J. Patil, Aviraj M. Teli, Sonali A. Beknalkar, Rajanish K. Kamat, Jinho Bae, Jae Cheol Shin, Tukaram D. Dongale
Abstract
In the present study, various statistical and machine learning (ML) techniques were used to understand how device fabrication parameters affect the performance of copper oxide-based resistive switching (RS) devices. In the present case, the data was collected from copper oxide RS devices-based research articles, published between 2008 to 2022. Initially, different patterns present in the data were analyzed by statistical techniques. Then, the classification and regression tree algorithm (CART) and decision tree (DT) ML algorithms were implemented to get the device fabrication guidelines for the continuous and categorical features of copper oxide-based RS devices, respectively. In the next step, the random forest algorithm was found to be suitable for the prediction of continuous-type features as compared to a linear model and artificial neural network (ANN). Moreover, the DT algorithm predicts the performance of categorical-type features very well. The feature importance score was calculated for each continuous and categorical feature by the gradient boosting (GB) algorithm. Finally, the suggested ML guidelines were employed to fabricate the copper oxide-based RS device and demonstrated its non-volatile memory properties. The results of ML algorithms and experimental devices are in good agreement with each other, suggesting the importance of ML techniques for understanding and optimizing memory devices.