Investigation of the atomic layer etching mechanism for Al<sub>2</sub>O<sub>3</sub> using hexafluoroacetylacetone and H<sub>2</sub> plasma
Nicholas J. Chittock, Joris Maas, Ilker Tezsevin, Marc J. M. Merkx, Harm C. M. Knoops, W. M. M. Kessels, Adriaan J. M. Mackus
Abstract
an etch inhibition and surface cleaning mechanism. It is discussed that such a mechanism enables thickness control on the sub-nm scale, with minimal contamination and low damage.
Topics & Concepts
Etching (microfabrication)Materials scienceLayer (electronics)Atomic layer depositionScalingPlasmaPlasma etchingMechanism (biology)NanotechnologyPhysicsQuantum mechanicsGeometryMathematicsSemiconductor materials and devicesPlasma Diagnostics and ApplicationsElectronic and Structural Properties of Oxides