Nucleation mechanism of GaN crystal growth on porous GaN/sapphire substrates
Lei Liu, Xu Zhang, Shouzhi Wang, Guodong Wang, Jiaoxian Yu, Xiaobo Hu, Qingjun Xu, Xiangang Xu, Lei Zhang
Abstract
This paper describes the nucleation mechanism of GaN crystal growth on porous GaN/sapphire substrates. The growth behavior of epitaxially grown GaN on porous substrates is studied in detail for the first time at the nucleation stage.
Topics & Concepts
NucleationSapphireMaterials scienceEpitaxyCrystal growthCrystal (programming language)PorosityMechanism (biology)CrystallographyChemical physicsChemical engineeringNanotechnologyChemistryOpticsComposite materialLayer (electronics)Computer scienceEngineeringPhysicsOrganic chemistryEpistemologyProgramming languagePhilosophyLaserGaN-based semiconductor devices and materialsZnO doping and propertiesGa2O3 and related materials