Lattice-matched InAlN/GaN high-electron-mobility transistors (HEMTs)
S. Ravi, C. Priya, A. Mohanbabu, S. Maheswari, A. Lakshmi Narayana, P. Murugapandiyan
Topics & Concepts
Materials scienceTransistorHigh-electron-mobility transistorOptoelectronicsLattice (music)Induced high electron mobility transistorWide-bandgap semiconductorSolid mechanicsCondensed matter physicsElectrical engineeringComposite materialPhysicsEngineeringAcousticsVoltageGaN-based semiconductor devices and materialsRadio Frequency Integrated Circuit DesignSemiconductor Quantum Structures and Devices