Impact Ionization and Critical Electric Field in ⟨010⟩-Oriented β-Ga<sub>2</sub>O<sub>3</sub> Schottky Barrier Diode
Takaya Sugiura, Nobuhiko Nakano
Abstract
The hole impact ionization coefficient (IIC) of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\beta $ </tex-math></inline-formula> -Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> in the <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\langle 010\rangle $ </tex-math></inline-formula> direction is determined by numerical simulation, as <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\beta ({E}\,) = 4.0\times 10^{5} \cdot exp(-3.1\times 10^{6}/{E}\,)$ </tex-math></inline-formula> . The simulation model reproduces the experiment of the Schottky barrier diode (SBD) operation, and the investigation of the IIC is performed by varying the value to obtain the matched breakdown voltage at the reversed bias operation. The breakdown simulation results are consistent with the experimental results, with only small errors. By comparing the input modeling with the electron-only impact ionization, hole impact ionization is dominant for SBD breakdown operations.