Electrical properties of Al/CZTSe nanocrystal Schottky diode
Z. Kişnişci, Faruk Özel, S. Karadeniz, Nihat Tuğluoğlu, Sultan Süleyman Özel, Ömer Faruk Yüksel
Abstract
Abstract In this study, electrical changes in diode parameters of Schottky diodes that made of a kesterite semiconductor were examined under different temperatures. For this aim, Cu 2 ZnSnSe 4 (CZTSe) nanocrystals were fabricated using the hot injection technique, and it was covered by spin coating on an ITO glass substrate. We was introduced the physical and structural analyses using scanning electron microscopy and X-ray spectroscopy. Current–voltage measurements were fulfilled at different temperature (from 100 to 325 K) under dark environment. It was observed that its electrical parameters were strongly affected by temperature.
Topics & Concepts
Materials scienceSchottky diodeOptoelectronicsKesteriteNanocrystalDiodeSubstrate (aquarium)Scanning electron microscopeSemiconductorSpin coatingCoatingCZTSNanotechnologyComposite materialSolar cellGeologyOceanographyChalcogenide Semiconductor Thin FilmsSemiconductor materials and interfacesQuantum Dots Synthesis And Properties