ZnO Nanoparticle-Induced Performance Enhancement of a Coumarin-Based Nonvolatile Memory Device
Rahul Deb, Farhana Yasmin Rahman, Surajit Sarkar, Hritinava Banik, Pabitra Kumar Paul, Debajyoti Bhattacharjee, Khuloud A. Alibrahim, Abdullah N. Alodhayb, Syed Arshad Hussain
Abstract
Resistive switching memory devices based on organic as well as organic–inorganic hybrid materials are emerging as viable candidates for post-Moore nonvolatile memory applications. In this article, we report a nonvolatile write-once-read-many (WORM) resistive switching memory device (Al/7HNO3C/ITO) based on a coumarin derivative 7-hydroxy-N-octadecyl coumarin-3-carboxamide (7HNO3C). The device yield, retention time, read endurance, and memory window of the designed memory device were found to be 36.11%, 4 × 10 3 s, 1270 cycles, and ∼10 2, respectively. ZnO nanoparticles were synthesized and incorporated into the active layer of the coumarin-based device in order to enhance the memory performance of the device. The ZnO-incorporated device showed overall improvement in terms of device yield (83.33%), retention time (experimentally 3 × 10 4 s, extrapolated 10 years), read endurance (9930 cycles), and memory window (∼10 3 ) along with a significant decrease in the device-to-device variability. Moreover, density functional theory (DFT) studies and temperature-dependent measurements have revealed that charge transfer and oxygen vacancy filament formation were the key mechanisms behind such an observed memory behavior.