Simulating the Electronic Structure of Spin Defects on Quantum Computers
Benchen Huang, Marco Govoni, Giulia Galli
Abstract
We present calculations of both the ground-and excited-state energies of spin defects in solids carried out on a quantum computer, using a hybrid classical-quantum protocol. We focus on the negatively charged nitrogen-vacancy center in diamond and on the double vacancy in 4H SiC, which are of interest for the realization of quantum technologies. We employ a recently developed first-principles quantum embedding theory to describe point defects embedded in a periodic crystal and to derive an effective Hamiltonian, which is then transformed to a qubit Hamiltonian by means of a parity transformation. We use the variational quantum eigensolver (VQE) and quantum subspace expansion methods to obtain the ground and excited states of spin qubits, respectively, and we propose a promising strategy for noise mitigation. We show that by combining zero-noise extrapolation techniques and constraints on electron occupation to overcome the unphysical-state problem of the VQE algorithm, one can obtain reasonably accurate results on near-term-noisy architectures for ground-and excited-state properties of spin defects.