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Role of MoTi diffusion barrier in amorphous indium-gallium-zinc-oxide thin-film transistors with a copper source/drain electrode

Jin-Lee Kim, Chang Kyu Lee, Min Jae Kim, Sang Ho Lee, Jae Kyeong Jeong

2021Thin Solid Films25 citationsDOI

Topics & Concepts

Ohmic contactMaterials scienceThin-film transistorContact resistanceOptoelectronicsTransistorDiffusion barrierAmorphous solidElectrodeAnnealing (glass)NanotechnologyElectrical engineeringComposite materialLayer (electronics)ChemistryOrganic chemistryVoltagePhysical chemistryEngineeringThin-Film Transistor TechnologiesSilicon and Solar Cell TechnologiesElectrical and Thermal Properties of Materials
Role of MoTi diffusion barrier in amorphous indium-gallium-zinc-oxide thin-film transistors with a copper source/drain electrode | Litcius