Regulation of Ge vacancies through Sm doping resulting in superior thermoelectric performance in GeTe
Tingdong Zhang, Shuping Deng, Xiaodie Zhao, Xuefeng Ruan, N. D. Qi, Zhiquan Chen, Xianli Su, Xinfeng Tang
Abstract
A high thermoelectric figure of merit ZT of 2.5 at 730 K is achieved in Ge 1− x Sm x Te through synergetic optimization of electrical and thermal transport properties, leading to superior thermoelectric performance of the materials.
Topics & Concepts
Thermoelectric effectMaterials scienceDopingFigure of meritThermoelectric materialsCondensed matter physicsOptoelectronicsThermal conductivityThermodynamicsPhysicsComposite materialAdvanced Thermoelectric Materials and DevicesPhase-change materials and chalcogenidesChalcogenide Semiconductor Thin Films