Origin of Ga vacancy-related YL center in n-type GaN: A first-principles study
Qian-Ji Wang, Hai‐Shan Zhang, Lin Shi, Jian Gong
Topics & Concepts
Video Graphics ArrayDeep-level transient spectroscopyVacancy defectMaterials scienceAtomic physicsCrystallographic defectChemistryMolecular physicsOptoelectronicsCrystallographyPhysicsSiliconCMOSGaN-based semiconductor devices and materialsGa2O3 and related materialsZnO doping and properties