Investigation of variable field plate length in GaN HEMT on SiC substrate for MMIC applications
Binola K. Jebalin, G. Gifta, S. Angen, P. Prajoon, D. Nirmal
Topics & Concepts
High-electron-mobility transistorElectric fieldBreakdown voltageMonolithic microwave integrated circuitMaterials scienceVoltageOptoelectronicsMicrowaveSubstrate (aquarium)Field (mathematics)Electrical engineeringTransistorEngineeringPhysicsTelecommunicationsMathematicsGeologyCMOSOceanographyAmplifierPure mathematicsQuantum mechanicsGaN-based semiconductor devices and materialsSilicon Carbide Semiconductor TechnologiesRadio Frequency Integrated Circuit Design