Modeling and Analysis of PBTI, and HCD in Presence of Self-Heating in GAA-SNS NFETs
Nilotpal Choudhury, Souvik Mahapatra
Abstract
Ultrafast measurements (10- <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu \text{s}$ </tex-math></inline-formula> delay) are done to characterize the time evolution of threshold voltage shift ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\boldsymbol {\Delta } {V}_{T}$ </tex-math></inline-formula> ) due to the positive bias temperature instability (PBTI) and hot carrier degradation (HCD) in gate all around stacked nanosheet (GAA-SNS) N-channel field-effect transistors (NFETs). <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\boldsymbol {\Delta } {V}_{T}$ </tex-math></inline-formula> time kinetics are analyzed at different gate voltages ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{G}$ </tex-math></inline-formula> ) and temperatures ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${T}$ </tex-math></inline-formula> ) during PBTI, and at various <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{G}$ </tex-math></inline-formula> /drain voltage ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{D}$ </tex-math></inline-formula> ) during HCD. PBTI contribution during HCD is estimated with a physics-based BTI analysis tool (BAT) framework in presence of self-heating (SH) and nonuniform vertical field ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${E}_{\text {VRT}}$ </tex-math></inline-formula> ) covering full <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{G} / {V}_{D}$ </tex-math></inline-formula> span and intrinsic HCD contribution is decoupled.