Self-organized Electrical Nanostructure of DND in Multi -Layered Nanostructures Espatterning
Afshin Rashid
Abstract
Note: In nanoelectronics technology, special parameters and systems must be used to perform such processes. For example, in the metal marking process, it is inevitable to use copper metal instead of the common aluminum metal for internal connections between different practical parts. But the rapid penetration of Cu atoms under Si during heat treatment leads to the formation of a copper silicide layer and ultimately causes the destruction of the electronic component. To solve this problem, they usually use an intermediate layer of retarding materials such as Ta and w or Mo as a penetration barrier to improve the thermal stability of the Si/Cu layer . In the characterization of nanoparticles and Si/Ta/Cu multi-layer systems, there is an effect of negative bias voltage on improving the electrical and structural properties of the permeation barrier of the Ta sputtering layer in the Si/Ta system. Surface processes of the Si layer, including burning, are carried out by plasma and ion beam technology. This kind of integrated circuits with their unique characteristics in the nanometer scale have various applications of mesoscopic systems.