Self-frequency-conversion nanowire lasers
Ruixuan Yi, Xutao Zhang, Chen Li, Bijun Zhao, Jing Wang, Zhiwen Li, Xuetao Gan, Li Li, Ziyuan Li, Fanlu Zhang, Liang Fang, Naiyin Wang, Pingping Chen, Wei Lü, Lan Fu, Jianlin Zhao, Hark Hoe Tan, C. Jagadish
Abstract
Abstract Semiconductor nanowires (NWs) could simultaneously provide gain medium and optical cavity for performing nanoscale lasers with easy integration, ultracompact footprint, and low energy consumption. Here, we report III–V semiconductor NW lasers can also be used for self-frequency conversion to extend their output wavelengths, as a result of their non-centrosymmetric crystal structure and strongly localized optical field in the NWs. From a GaAs/In 0.16 Ga 0.84 As core/shell NW lasing at 1016 nm, an extra visible laser output at 508 nm is obtained via the process of second-harmonic generation, as confirmed by the far-field polarization dependence measurements and numerical modeling. From another NW laser with a larger diameter which supports multiple fundamental lasing wavelengths, multiple self-frequency-conversion lasing modes are observed due to second-harmonic generation and sum-frequency generation. The demonstrated self-frequency conversion of NW lasers opens an avenue for extending the working wavelengths of nanoscale lasers, even to the deep ultraviolet and THz range.