Challenges to overcome breakdown limitations in lateral β-Ga2O3 MOSFET devices
Kornelius Tetzner, Oliver Hilt, Andreas Popp, Saud Bin Anooz, Joachim Würfl
Topics & Concepts
MOSFETBreakdown voltageMaterials scienceOptoelectronicsWaferDopingTransistorSubstrate (aquarium)Field-effect transistorDopantEpitaxyVoltageElectrical engineeringLayer (electronics)NanotechnologyEngineeringOceanographyGeologyGa2O3 and related materialsZnO doping and propertiesElectronic and Structural Properties of Oxides