2D Dual Gate Field‐Effect Transistor Enabled Versatile Functions
Yue Pang, Yaoqiang Zhou, Lei Tong, Jianbin Xu
Abstract
Abstract Advanced computing technologies such as distributed computing and the Internet of Things require highly integrated and multifunctional electronic devices. Beyond the Si technology, 2D‐materials‐based dual‐gate transistors are expected to meet these demands due to the ultra‐thin body and the dangling‐bond‐free surface. In this work, a molybdenum disulfide (MoS 2 ) asymmetric‐dual‐gate field‐effect transistor (ADGFET) with an In 2 Se 3 top gate and a global bottom gate is designed. The independently controlled double gates enable the device to achieve an on/off ratio of 10 6 with a low subthreshold swing of 94.3 mV dec −1 while presenting a logic function. The coupling effect between the double gates allows the top gate to work as a charge‐trapping layer, realizing nonvolatile memory (10 5 on/off ratio with retention time over 10 4 s) and six‐level memory states. Additionally, ADGFET displays a tunable photodetection with the responsivity reaching the highest value of 857 A W −1 , benefiting from the interface coupling between the double gates. Meanwhile, the photo‐memory property of ADGFET is also verified by using the varying exposure dosages‐dependent illumination. The multifunctional applications demonstrate that the ADGFET provides an alternative way to integrate logic, memory, and sensing into one device architecture.